Enhancing Softness in Fast Recovery Diodes via Quasi Local Lifetime Control

A novel technique to tailor the carrier lifetime in silicon diodes by combining electron irradiation and hydrogen implantation is presented. The electron defects are locally passivated by carefully tuning the electron and hydrogen doses and the annealing conditions. Measurements of the fabricated devices and supporting device simulations are shown. The devices are compared with conventional diodes and the benefits of the quasilocal lifetime control are discussed.