A review of short-circuit failure of Silicon Carbide MOSFETs

Short-circuit (SC) robustness is crucial for SiC MOSFETs in applications like electric vehicle. To ensure reliable performance in such applications, properly functioning devices must demonstrate robust SC withstand capability. This paper systematically reviews SC failure mechanisms through failure timing, electrical signatures, and physical root causes. Seven key failure signatures including dielectric cracking, gate oxide degradation, parasitic bipolar junction transistor (BJT) activation, pn-junction leakage, aluminum diffusion, inter-pad shorts, and oscillation caused gate circuit damage are analyzed. This paper could guide future device optimization and shortcircuit protection strategy development.