Contact-less Measurement Method of Minor Carrier Lifetime in Si Monocrystal

Several methods for estimating carrier lifetime in silicon bulk or monocrystalline silicon have been known for more than seventy years. However, most of these methods rely on direct galvanic contact with the measured samples. This requirement assumes perfect sample preparation and can sometimes negatively affect the measurement itself. Surface properties and their treatment are crucial for accurate and reproducible results. This article proposes a new method in which direct contact between the measuring circuit and the sample is avoided.