Device Simulation of a Bidirectional Phase Control Thyristor

The operation of Bidirectional Phase Control Thyristor (BiPCT) is analyzed using calibrated device simulation (TCAD). Because of too large high-voltage device domain for 3-D simulation, a special 2-D approach to turn the device from the forward blocking regime to the ON-state has been used. The calibration of the simulation is carried out from the ON-state IV curves and commutation turn-off waveforms measured on real devices produced on 100 mm silicon wafers. Both unirradiated and proton irradiated devices are covered. Two operation modes of the BiPCT are investigated in more details: a) AC switch turned on by single gate pulse remaining permanently in the ON-state, and b) bidirectional thyristor with as high commutation di/dt capability as possible.