The Influence of Load Current on the Zth(t) Curve of IGBT
The transient thermal impedance curve Z<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf>(t) is a crucial parameter reflecting the heat dissipation characteristics of power semiconductor devices. Theoretically, Z<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf>(t) is determined by material parameters and does not vary with changes in test conditions. Nevertheless, the Z<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf>(t) of IGBTs changes with the load current during test. This paper conducts an analysis of this phenomenon, clarifies that it is induced by the lateral temperature gradient of chip surface, and conducts experimental verification.
Authors
- Maoyang Pan (ORCID: https://orcid.org/0009-0006-4734-3483)
- Luhong Xie (ORCID: https://orcid.org/0000-0001-8758-8801)
- Jiali Wu (ORCID: https://orcid.org/0000-0001-8521-331X)
- Lixin Wu (ORCID: https://orcid.org/0000-0003-0265-1707)
- Yongzhang Huang (ORCID: https://orcid.org/0000-0001-6443-0921)
- Erping Deng (ORCID: https://orcid.org/0000-0001-5047-0834)
- Yuxing Yan (ORCID: https://orcid.org/0009-0000-5426-7446)
- Hongyu Sun (ORCID: https://orcid.org/0009-0001-4734-1756)
- Hao Liu (ORCID: https://orcid.org/0000-0002-2366-9554)
Institutions
- North China Electric Power University (CN)
- Hefei University of Technology (CN)
- State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources
Publication Details
- Published
- 2025-08-27
- DOI
- https://doi.org/10.1109/isps65707.2025.11189915
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00