On the Equivalency of AC and DC Hot Carrier Stress in Power LDMOS Devices

Investigating the comparability of AC and DC hot- carrier stressed devices is crucial for understanding the impact on device drift in real applications. This study examines the effect of duty-cycle and frequency onto the observed degradation in I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sub,max</inf> condition. In addition, the influence on switching performance is explored. The findings show that, AC- and DC- stressed devices can be directly compared without additional precautions and corrections for this specific stessor-condition.