Solar Hydrogen Production with Metal/III–V Semiconductor Junction Monolithically Integrated on Si

GaAs is an excellent candidate for high‐performance photoelectrochemical water splitting due to its appropriate band‐edge and bandgap energies, as well as its excellent transport properties. The most significant limitations of GaAs for photoelectrochemical applications are its instability against corrosion, the high substrate cost, and the huge overpotentials required for triggering water electrolysis. The monolithic epitaxial integration of GaAs thin films directly on the Earth‐abundant Si fundamentally limits the costs associated with the substrate fabrication. Herein, photocathodes made of 1 µm thick GaAs layers epitaxially grown on p‐doped Si substrates are developed and their performances are compared to those of bare p‐doped GaAs electrodes. Sulfur passivation and standard interfacing with Pt catalyst are applied and analyzed for both series of photocathodes. A massive onset potential shift of 0.63 V is demonstrated for GaAs/Si photocathodes after electroless Pt deposition and sulfur passivation, reaching an onset potential of 0.4 V versus the reversible hydrogen electrode. The stability of the Pt/GaAs/Si photocathode is finally assessed over more than 112 h. These findings are essential for further development toward the fabrication of cost‐efficient and stable unassisted photoelectrochemical cells for green hydrogen production.

Authors

Institutions

Publication Details

Journal
ChemElectroChem
Published
2025-10-10
DOI
https://doi.org/10.1002/celc.202500251
Primary Topic
Silicon and Solar Cell Technologies
Type
article
Field-Weighted Citation Impact
0.00

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Solar Hydrogen Production with Metal/III–V Semiconductor Junction Monolithically Integrated on Si

Ludovic Largeau, Angus Rockett, Bruno Fabre, Yoan Léger et al.
ChemElectroChem
Silicon and Solar Cell Technologies
article

Solar Hydrogen Production with Metal/III–V Semiconductor Junction Monolithically Integrated on Si

Ludovic Largeau, Angus Rockett, Bruno Fabre, Yoan Léger, Sylvie Harel, K. Xerxes Steirer, G. Patriarche, Nicolas Bertru, Gabriel Loget, Christophe Levallois, Charles Cornet, Hanh Vi Le, Rozenn Bernard, Antoine Létoublon, Fauzia Jabeen, Sylvain Febvre, Karine Tavernier, Tony Rohel, Julie Le Pouliquen, Bienvenu Boulingui Koumba, Fatima Merhi
article en

Abstract

GaAs is an excellent candidate for high‐performance photoelectrochemical water splitting due to its appropriate band‐edge and bandgap energies, as well as its excellent transport properties. The most significant limitations of GaAs for photoelectrochemical applications are its instability against corrosion, the high substrate cost, and the huge overpotentials required for triggering water electrolysis. The monolithic epitaxial integration of GaAs thin films directly on the Earth‐abundant Si fundamentally limits the costs associated with the substrate fabrication. Herein, photocathodes made of 1 µm thick GaAs layers epitaxially grown on p‐doped Si substrates are developed and their performances are compared to those of bare p‐doped GaAs electrodes. Sulfur passivation and standard interfacing with Pt catalyst are applied and analyzed for both series of photocathodes. A massive onset potential shift of 0.63 V is demonstrated for GaAs/Si photocathodes after electroless Pt deposition and sulfur passivation, reaching an onset potential of 0.4 V versus the reversible hydrogen electrode. The stability of the Pt/GaAs/Si photocathode is finally assessed over more than 112 h. These findings are essential for further development toward the fabrication of cost‐efficient and stable unassisted photoelectrochemical cells for green hydrogen production.

ChemElectroChemVol. 12(21)
Centre National de la Recherche Scientifique (FR), Université de Bordeaux (FR), Colorado School of Mines (US), Université Paris-Saclay (FR), Institut National des Sciences Appliquées de Rennes (FR), Institut des Sciences Moléculaires (FR), Institut des Sciences Chimiques de Rennes (FR), Institut des Matériaux Jean Rouxel (FR), Centre de Nanosciences et de Nanotechnologies (FR), Institut de Physique de Rennes (FR), Institut Polytechnique de Bordeaux (FR), Université de Rennes (FR)
Equipex, Agence Nationale de la Recherche, Région Bretagne
Openalex Percentile: Top 72%
Silicon and Solar Cell Technologies
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.