Electron beam co-deposited Bi <sub> 1− <i>x</i> </sub> Te <sub> <i>x</i> </sub>

BiTe-thin films were deposited by electron beam co-evaporation. The influence of the stoichiometry on the Seebeck coefficient, electrical conductivity and the derived power factor is investigated as-deposited as well as after several annealing steps.

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Publication Details

Journal
Journal of Materials Chemistry C
Published
2025-01-01
DOI
https://doi.org/10.1039/d5tc02391b
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
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article

Electron beam co-deposited Bi 1− x Te x

Jan Dellith, Heike Lorenz, Hans Krüger, P. Lorenz et al.
Journal of Materials Chemistry C
Advanced Thermoelectric Materials and Devices
article

Electron beam co-deposited Bi 1− x Te x

Jan Dellith, Heike Lorenz, Hans Krüger, P. Lorenz, Gabriel Zieger
article en

Abstract

BiTe-thin films were deposited by electron beam co-evaporation. The influence of the stoichiometry on the Seebeck coefficient, electrical conductivity and the derived power factor is investigated as-deposited as well as after several annealing steps.

Journal of Materials Chemistry CVol. 13(44)
Helmholtz Institute Jena (DE), Leibniz Institute of Photonic Technology (DE)
Openalex Percentile: Top 78%
Advanced Thermoelectric Materials and Devices
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