Analysis of Electrical Parameters in High-K Spacer GaN-based SOI TG FinFET

This paper investigates the electrical performance of a High-k spacer Gallium Nitride Semiconductor on Insulator Fin Field Effect Transistor by analyzing the influence of various high-k gate oxide materials such as aluminum oxide zirconium oxide and titanium dioxide. The study evaluates the role of the Semiconductor on the Insulator substrate and the high-k spacer in optimizing important parameters such as drive current, on-state current, off-state current, on to off current ratio, and potential variations. A comparative analysis is performed between the proposed Gallium Nitride Semiconductor on Insulator Fin Field Effect Transistor the conventional bulk Gallium Nitride Fin Field Effect Transistor and the standard Gallium Nitride Semiconductor on Insulator Fin Field Effect Transistor. The results show that the integration of a high-k spacer leads to significant enhancement in the on-to-off current ratio and also helps in reducing short-channel effects. These improvements make the device highly suitable for low-power and high-performance Complementary Metal Oxide Semiconductor applications in direct current operating environments. This work highlights the potential of high-k spacer-based Fin Field Effect Transistor technology for future semiconductor devices.