Proton Irradiation on Hydrogenated Amorphous Silicon Flexible Devices
Radiation damage tests in hydrogenated amorphous silicon (a-Si:H) flexible flux and dose-measuring devices have been performed with a 3 MeV proton beam, to evaluate combined displacement and total ionizing dose damage. The tested devices had two different configurations and thicknesses. The first device was a 2 μm thick n-i-p diode having a 5 mm x 5 mm area. The second device was a 5 μm thick charge selective contact detector having the same area. Both the devices were deposited on a flexible polyimide substrate and were irradiated up to the fluence of 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">16</sup> n<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eq</sub>/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>. The response to different proton fluxes has been measured before irradiation and after irradiation at 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">16</sup> n<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eq</sub>/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> for charge-selective contacts and n-i-p devices. The effect of annealing for partial performance recovery at 100°C for 12 hours was also studied and a final characterization on annealed devices was performed. This test is the first combined displacement and total ionizing dose test on flexible a-Si:H devices.
Authors
- L. Servoli (ORCID: https://orcid.org/0000-0003-1725-9185)
- Mariacristina Guarrera (ORCID: https://orcid.org/0009-0008-5799-644X)
- Anna Grazia Monteduro (ORCID: https://orcid.org/0000-0002-9265-134X)
- M. Bizzarri
- D. Calvo (ORCID: https://orcid.org/0000-0001-6006-7467)
- N. Zema (ORCID: https://orcid.org/0000-0003-2705-6146)
- K. Kanxheri (ORCID: https://orcid.org/0000-0002-9972-1961)
- Monica Setia Vasquez Mora
- S. Pallotta (ORCID: https://orcid.org/0000-0003-4123-7971)
- Giada Petringa (ORCID: https://orcid.org/0000-0002-2854-8436)
- Lucio Maruccio
- Anna Paola Caricato (ORCID: https://orcid.org/0000-0003-3512-1665)
- D. Passeri (ORCID: https://orcid.org/0000-0001-5322-2414)
- C. Talamonti (ORCID: https://orcid.org/0000-0003-2955-6451)
- Saba Aziz (ORCID: https://orcid.org/0009-0001-4093-2254)
- A. Morozzi (ORCID: https://orcid.org/0000-0003-1611-5024)
- Matteo Polo (ORCID: https://orcid.org/0000-0003-4269-973X)
- L. Frontini (ORCID: https://orcid.org/0000-0002-1137-8629)
- Michele Fabi (ORCID: https://orcid.org/0000-0002-2464-1369)
- Jonathan Thomet (ORCID: https://orcid.org/0000-0002-7528-7312)
- M. Pedio (ORCID: https://orcid.org/0000-0002-3305-4318)
- A. Stabile (ORCID: https://orcid.org/0000-0002-6868-8329)
- G. de Cesare (ORCID: https://orcid.org/0000-0002-9935-2975)
- Lucio Calcagnile (ORCID: https://orcid.org/0000-0001-8800-218X)
- C. Grimani (ORCID: https://orcid.org/0000-0002-5467-6386)
- M. Cazzanelli (ORCID: https://orcid.org/0000-0002-3182-5908)
- Roberto Catalano (ORCID: https://orcid.org/0000-0003-3973-2551)
- D. Caputo (ORCID: https://orcid.org/0000-0002-3709-6662)
- T. Croci (ORCID: https://orcid.org/0000-0001-5246-0269)
- N. Wyrsch (ORCID: https://orcid.org/0000-0002-4588-0166)
- P. Placidi (ORCID: https://orcid.org/0000-0002-5408-5180)
- G.A.P. Cirrone (ORCID: https://orcid.org/0000-0001-5733-9281)
- Nicola Lovecchio (ORCID: https://orcid.org/0000-0002-2571-2712)
- A. Nascetti (ORCID: https://orcid.org/0000-0001-8138-7494)
- Silvia Rizzato (ORCID: https://orcid.org/0000-0002-3908-4796)
- Marco Petasecca (ORCID: https://orcid.org/0000-0001-5958-7457)
- Federico Sabbatini (ORCID: https://orcid.org/0000-0002-0532-6777)
- Francesca Lenta (ORCID: https://orcid.org/0009-0009-8936-9915)
- M. Menichelli (ORCID: https://orcid.org/0000-0002-9004-735X)
- P. De Remigis (ORCID: https://orcid.org/0000-0002-4930-7826)
- Gianluca Quarta (ORCID: https://orcid.org/0000-0002-3648-1411)
- A. Quaranta (ORCID: https://orcid.org/0000-0003-1320-091X)
- R. Cirio (ORCID: https://orcid.org/0000-0001-9669-848X)
- G. Cuttone (ORCID: https://orcid.org/0000-0002-9534-4855)
- G. Mazza (ORCID: https://orcid.org/0000-0003-3174-542X)
- Mattia Villani (ORCID: https://orcid.org/0000-0003-2429-1626)
- Giuseppe Maruccio (ORCID: https://orcid.org/0000-0001-7669-0253)
- Luca Tosti (ORCID: https://orcid.org/0000-0003-2941-965X)
- Clarissa Buti (ORCID: https://orcid.org/0009-0009-2488-5548)
- Matthew Large (ORCID: https://orcid.org/0000-0002-6866-1943)
- Aishah Bashiri (ORCID: https://orcid.org/0000-0003-3273-9435)
- Maria Ionica
- Valentino Liberali (ORCID: https://orcid.org/0000-0003-1333-6876)
- Hamza Hasnaoui
- Richard Wheadon
- Andrea Papi
- Maurizio de Martino (ORCID: https://orcid.org/0009-0003-4232-9357)
- Francesca Peverini
- Sylvain Dunand
- M. Caprai
- Federico Cittadini
Institutions
- University of Padua (IT)
- Istituto Nazionale di Fisica Nucleare (IT)
- Politecnico di Torino (IT)
- University of Milan (IT)
- University of Urbino (IT)
- University of Trento (IT)
- University of Wollongong (AU)
- University of Perugia (IT)
- Istituto Nazionale di Fisica Nucleare, Sezione di Roma Tre (IT)
- Istituto Nazionale di Fisica Nucleare, Sezione di Lecce (IT)
- Istituto Nazionale di Fisica Nucleare, Sezione di Torino (IT)
- Istituto Officina dei Materiali (IT)
- Institute of Structure of Matter (IT)
- Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali del Sud (IT)
- Istituto Nazionale di Fisica Nucleare, Sezione di Firenze (IT)
- Istituto Nazionale di Fisica Nucleare, Sezione di Milano (IT)
- Istituto Nazionale di Fisica Nucleare, Sezione di Perugia (IT)
- University of Florence (IT)
- Najran University (SA)
- École Polytechnique Fédérale de Lausanne (CH)
Publication Details
- Journal
- IEEE Transactions on Nuclear Science
- Published
- 2025-10-09
- DOI
- https://doi.org/10.1109/tns.2025.3619653
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00