Cu <sub>2</sub> MoS <sub>4</sub> Nanosheets via Solvothermal Synthesis for Ag/Cu <sub>2</sub> MoS <sub>4</sub> /Ag MSM Photodetector

This letter reports an efficient broadband metal–semiconductor–metal (MSM) photodetector based on an Ag/Cu<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>MoS<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> (CMS) nanosheets/Ag architecture fabricated on a SiO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>-coated Si substrate. The CMS nanosheets were synthesized via a low-cost, one-pot solvothermal method. The MSM device was realized by thermal evaporation deposition of Ag electrodes onto the CMS film. The photoresponse characteristics were systematically evaluated under UV–visible illumination (385–624 nm). The device delivered optimal performance at 385 nm, achieving a responsivity of ∼6.82 A/W, a detectivity of 2.05 × 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> Jones, and an external quantum efficiency (EQE) of 2196% under an incident power density of 0.83 mW/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at a 3 V bias. Additionally, the device exhibited fast temporal response under white light illumination, demonstrating rise and fall times of 180 ms and 330 ms, respectively.

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Publication Details

Journal
IEEE Photonics Technology Letters
Published
2025-10-09
DOI
https://doi.org/10.1109/lpt.2025.3619846
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

Cu 2 MoS 4 Nanosheets via Solvothermal Synthesis for Ag/Cu 2 MoS 4 /Ag MSM Photodetector

Shivam Verma, Sanjeev Mani Yadav, Amritanshu Pandey, Vivek Singh
IEEE Photonics Technology Letters
Chalcogenide Semiconductor Thin Films
article

Cu 2 MoS 4 Nanosheets via Solvothermal Synthesis for Ag/Cu 2 MoS 4 /Ag MSM Photodetector

Shivam Verma, Sanjeev Mani Yadav, Amritanshu Pandey, Vivek Singh
article en

Abstract

This letter reports an efficient broadband metal–semiconductor–metal (MSM) photodetector based on an Ag/Cu<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>MoS<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> (CMS) nanosheets/Ag architecture fabricated on a SiO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>-coated Si substrate. The CMS nanosheets were synthesized via a low-cost, one-pot solvothermal method. The MSM device was realized by thermal evaporation deposition of Ag electrodes onto the CMS film. The photoresponse characteristics were systematically evaluated under UV–visible illumination (385–624 nm). The device delivered optimal performance at 385 nm, achieving a responsivity of ∼6.82 A/W, a detectivity of 2.05 × 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> Jones, and an external quantum efficiency (EQE) of 2196% under an incident power density of 0.83 mW/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at a 3 V bias. Additionally, the device exhibited fast temporal response under white light illumination, demonstrating rise and fall times of 180 ms and 330 ms, respectively.

IEEE Photonics Technology LettersVol. 38(2)
Indian Institute of Information Technology Vadodara (IN), Indian Institute of Technology BHU (IN), Banaras Hindu University (IN)
Openalex Percentile: Top 72%
Chalcogenide Semiconductor Thin Films
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