Building-block-selective deposition of self-assembled monolayers for enhancing interface polarity in solution-processed thin film transistors
A selective SAM deposition method was developed to functionalize only the glass substrate in glass/ITO templates. This strategy positively affected the interface dipole and improved charge transport in p-type, n-type, and ambipolar transistors.
Authors
- Yian Tai
- Michael Zharnikov (ORCID: https://orcid.org/0000-0002-3708-7571)
- Bernice Karsten (ORCID: https://orcid.org/0009-0002-9502-8614)
- P.K. Chuang
Institutions
- National Taiwan University of Science and Technology (TW)
- Heidelberg University (DE)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc02062j
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00