The GaN/MgAl <sub>2</sub> S <sub>4</sub> heterojunction: an excellent candidate material for photodetectors
The GaN/MgAl 2 S 4 van der Waals heterojunction is successfully constructed, demonstrating exceptional photodetection capabilities with a photocurrent peak of 0.818 a 0 2 per photon and an extinction ratio peak of 222.25.
Authors
- Enling Li (ORCID: https://orcid.org/0000-0002-5973-3300)
- Deming Ma (ORCID: https://orcid.org/0000-0002-0399-0383)
- Xiang Qi (ORCID: https://orcid.org/0000-0002-0939-8874)
- Zhen Cui (ORCID: https://orcid.org/0000-0002-6639-153X)
- Xiaoyu Zhao (ORCID: https://orcid.org/0000-0002-4006-6296)
- Yang Shen (ORCID: https://orcid.org/0000-0001-6020-0539)
- Kunming Qin
Institutions
- Xi'an University of Technology (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc03389f
- Primary Topic
- Inorganic Fluorides and Related Compounds
- Type
- article
- Field-Weighted Citation Impact
- 0.00