Optical properties of InGaAsN quantum well-based microlasers passivated by SiO <sub>2</sub> sol–gel film
Low-temperature, plasma-free method of sol-gel SiO<sub>2</sub> passivation coating film was applied to InGaAsN quantum well microlasers emitting in the 1.2 µm spectral range. A marked enhancement in their optical performance under optical pumping and current injection was found. For optically pumped microlasers, room-temperature lasing was achieved along with a substantial increase in photoluminescence intensity. In the case of electrically injected microlasers, the threshold current density was significantly reduced from 45.8 kA/cm<sup>2</sup> to 20.1 kA/cm<sup>2</sup>. The demonstrated approach offers broad prospects for the development of high-performance InGaAs(N) microlasers for applications in nanophotonics and optoelectronics.
Authors
- Ivan Melnichenko (ORCID: https://orcid.org/0000-0003-3542-6776)
- Talgat Shugabaev (ORCID: https://orcid.org/0000-0002-4110-1647)
- Vladislav O. Gridchin (ORCID: https://orcid.org/0000-0002-6522-3673)
- A. E. Zhukov (ORCID: https://orcid.org/0000-0002-4579-0718)
- Nikita Fominykh (ORCID: https://orcid.org/0000-0003-3919-6410)
- Ivan Makhov (ORCID: https://orcid.org/0000-0003-4527-1958)
- E. I. Moiseev (ORCID: https://orcid.org/0000-0003-3686-935X)
- M. M. Kulagina
- N. V. Kryzhanovskaya (ORCID: https://orcid.org/0000-0002-4945-9803)
Institutions
- St Petersburg University (RU)
- Institute for Analytical Instrumentation (RU)
- Ioffe Institute (RU)
Publication Details
- Journal
- Optics Letters
- Published
- 2025-10-09
- DOI
- https://doi.org/10.1364/ol.577745
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00