Regression analysis of temperature-dependent alumina atomic layer deposition growth per cycle using trimethylaluminum and water as precursors
Temperature-dependent alumina atomic layer deposition (ALD) growth per cycle (GPC) data were collected from studies of the trimethylaluminum (TMA)/water ALD process. The data were used in three regression approaches based on fitting the data to globally defined polynomials in temperature T, and two linear piecewise-continuous representations of the fitted data, each patterned after the hypothesized existence of an ALD window exhibiting constant or linear GPC(T) dependence. All three regression approaches identified a low-T region characterized by rising GPC with T, reaching a maximum of approximately 1.1 Å cycle−1 slightly below 200 °C, followed by a slower decline in GPC with T after this point. The results indicate that a temperature-independent ALD window for the TMA/water system may be relatively small (with lower and upper limits of 177 and 208 °C, respectively), if it exists at all.
Authors
- Raymond A. Adomaitis (ORCID: https://orcid.org/0009-0002-2742-6784)
Institutions
- University of Maryland, College Park (US)
Publication Details
- Journal
- Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
- Published
- 2025-10-09
- DOI
- https://doi.org/10.1116/6.0004738
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00