Multidomain FeFET-Based Pixel for In-Sensor Multiply-and-Accumulate Operations
This article presents a ferroelectric field-effect transistor (FeFET)-based active pixel sensor that performs in-sensor multiply-and-accumulate (MAC) operations by leveraging the multidomain polarization states of ferroelectric layers. The proposed design integrates a programmable FeFET into a three-transistor pixel circuit, where the FeFET’s programming-voltage-controlled nonvolatile conductance encodes the weight, and the photodiode voltage drop encodes the input. Their interaction generates an output current proportional to the product, enabling in-pixel analog multiplication. Accumulation is achieved by summing output currents along shared column lines, realizing full MAC functionality within the image sensor array. Extensive HSPICE simulations, using 45-nm CMOS models, validate the operation and confirm the scalability of the design for <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$3\times 3$</tex-math> </inline-formula> convolution kernels. The pixel pitch is 2.295 μm (horizontal) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times$</tex-math> </inline-formula> 2.4525 μm (vertical). The design also supports handling of negative weights, broadening its applicability to signed neural operations. This compact and energy-efficient design is well suited for real-time edge computing, neuromorphic vision, and secure sensing applications.
Authors
- Diego Ferrer (ORCID: https://orcid.org/0000-0002-5993-1366)
- Ahmedullah Aziz (ORCID: https://orcid.org/0000-0003-1573-4122)
- Kai Ni (ORCID: https://orcid.org/0000-0002-3628-3431)
- Md Rahatul Islam Udoy (ORCID: https://orcid.org/0000-0003-0729-6118)
- Wantong Li (ORCID: https://orcid.org/0000-0002-8288-393X)
Institutions
- University of California, Riverside (US)
- University of Notre Dame (US)
- University of Tennessee at Knoxville (US)
Publication Details
- Journal
- IEEE Transactions on Electron Devices
- Published
- 2025-10-09
- DOI
- https://doi.org/10.1109/ted.2025.3615918
- Citations
- 1
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.73