Heracles: A HfO <sub>2</sub> Ferroelectric Capacitor Compact Model for Efficient Circuit Simulations

The growing use of ferroelectric-based technology, extending beyond conventional memory storage applications, necessitates the development of compact models that can be easily integrated into circuit simulation environments. These models assist circuit designers in the design and the early assessment of the performance of their systems. The Heracles model is a physics-based compact model for circuit simulations in a SPICE environment for HfO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>-based ferroelectric capacitors (FeCaps). The model has been calibrated based on experimental data obtained from HfO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>-based FeCaps. A thermal model with an accurate description of the device parasitics is included to derive precise device characteristics based on first principles. The incorporation of statistical device data enables Monte Carlo analysis based on realistic distributions, thereby rendering the model particularly well-suited for design-technology co-optimization (DTCO). The model’s efficacy is further demonstrated in circuit simulations using an integrated circuit with current programming, wherein partial switching of the ferroelectric polarization is observed. Finally, the model was benchmarked in an array simulation, reaching convergence in 1.8 s with an array size of 100 kb.

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Publication Details

Journal
IEEE Transactions on Electron Devices
Published
2025-10-09
DOI
https://doi.org/10.1109/ted.2025.3615577
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
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article

Heracles: A HfO 2 Ferroelectric Capacitor Compact Model for Efficient Circuit Simulations

Luca Fehlings, Md. Hanif Ali, Veeresh Deshpande, Erika Covi et al.
IEEE Transactions on Electron Devices
Ferroelectric and Negative Capacitance Devices
article

Heracles: A HfO 2 Ferroelectric Capacitor Compact Model for Efficient Circuit Simulations

Luca Fehlings, Md. Hanif Ali, Veeresh Deshpande, Erika Covi, Udayan Ganguly, Paolo Gibertini, Egidio A. Gallicchio
article en

Abstract

The growing use of ferroelectric-based technology, extending beyond conventional memory storage applications, necessitates the development of compact models that can be easily integrated into circuit simulation environments. These models assist circuit designers in the design and the early assessment of the performance of their systems. The Heracles model is a physics-based compact model for circuit simulations in a SPICE environment for HfO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>-based ferroelectric capacitors (FeCaps). The model has been calibrated based on experimental data obtained from HfO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>-based FeCaps. A thermal model with an accurate description of the device parasitics is included to derive precise device characteristics based on first principles. The incorporation of statistical device data enables Monte Carlo analysis based on realistic distributions, thereby rendering the model particularly well-suited for design-technology co-optimization (DTCO). The model’s efficacy is further demonstrated in circuit simulations using an integrated circuit with current programming, wherein partial switching of the ferroelectric polarization is observed. Finally, the model was benchmarked in an array simulation, reaching convergence in 1.8 s with an array size of 100 kb.

IEEE Transactions on Electron DevicesVol. 72(11)
Indian Institute of Technology Bombay (IN), University of Groningen (NL), Politecnico di Torino (IT)
Openalex Percentile: Top 72%
Ferroelectric and Negative Capacitance Devices
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Heracles: A HfO <sub>2</sub> Ferroelectric Capacitor Compact Model for Efficient Circuit Simulations — Luca Fehlings, Md. Hanif Ali, et al. · IEEE Transactions on Electron Devices (2025) | TGRS Research Map | TGRS