Fully CMOS‐Compatible 3‐T Embedded NOR Flash Memory Achieving 28 ns Long‐Term Potentiation/Long‐Term Depression for High‐Speed Online Training Accelerators

For the first time, a fully complementary metal–oxide–semiconductor process‐compatible novel three‐transistor (3‐T) embedded NOR flash is demonstrated on a 28 nm fully depleted silicon‐on‐insulator platform. By introducing the band‐band hot hole (BBHH) and channel hot electron (CHE) injection enabled by NMOS/PMOS pair coupling transistors, the proposed memory achieves record‐fast 28‐ns long‐term potentiation (LTP) and depression (LTD), offering high‐speed and highly reliable synaptic behavior for online training in neuromorphic hardware applications. The proposed 3‐T embedded NOR flash demonstrates highly reliable operations: only 1.36% memory window degradation and 4.7% subthreshold swing degradation after 10 7 program/erase (P/E) cycles. Moreover, its near‐zero linearity LTP/LTD operations deliver a high classification accuracy of 92% on the Modified National Institute of Standards and Technology (MNIST) datasets. Finally, the proposed device shows an exceptionally short training latency of 2.68 s for 1M MNIST images, which confirms its suitability for high‐performance training accelerators.