<i>Ab initio</i> study of lithium diffusion at a layered carbon/amorphous silicon interface

Li diffusivity in γ-graphdiyne is higher than in amorphous silicon; migration across the interface has moderate barriers and does not limit Li diffusion kinetics in Si/C composites. Bulk a-Si is the diffusion bottleneck.

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Publication Details

Journal
RSC Applied Interfaces
Published
2025-01-01
DOI
https://doi.org/10.1039/d5lf00225g
Primary Topic
Semiconductor materials and interfaces
Type
article
Field-Weighted Citation Impact
0.00

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article

Ab initio study of lithium diffusion at a layered carbon/amorphous silicon interface

Christoph Kirsch, Daniel Sebastiani
RSC Applied Interfaces
Semiconductor materials and interfaces
article

Ab initio study of lithium diffusion at a layered carbon/amorphous silicon interface

Christoph Kirsch, Daniel Sebastiani
article en

Abstract

Li diffusivity in γ-graphdiyne is higher than in amorphous silicon; migration across the interface has moderate barriers and does not limit Li diffusion kinetics in Si/C composites. Bulk a-Si is the diffusion bottleneck.

RSC Applied InterfacesVol. 2(6)
Martin Luther University Halle-Wittenberg (DE)
Deutsche Forschungsgemeinschaft
Openalex Percentile: Top 77%
Semiconductor materials and interfaces
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<i>Ab initio</i> study of lithium diffusion at a layered carbon/amorphous silicon interface — Christoph Kirsch, Daniel Sebastiani · RSC Applied Interfaces (2025) | TGRS Research Map | TGRS