Automation of Electron Channeling Contrast Imaging: Investigation of Dislocations in AlGaN/GaN Heterostructures
Abstract The investigation and understanding of dislocations in semiconductors are essential for the development of semiconductor devices, in particular for AlGaN/GaN high electron mobility transistors (HEMTs). Based on Scanning Electron Microscopy (SEM), the technique of Electron Channeling Contrast Imaging (ECCI) offers a direct visualization of crystalline defects such as dislocations in bulk specimens and especially in the GaN crystal as well as a way to classify their type. This work widens the scan area of this method from a few square micrometers to the wafer dimensions thanks to a fully automated scan process, achieving valuable statistics for fabrication improvement.
Authors
- Alexander Hofer (ORCID: https://orcid.org/0000-0001-7164-408X)
- N. Killat
- Karen Geens (ORCID: https://orcid.org/0000-0003-1815-3972)
- Alexander Roch
- Antoine Guitton (ORCID: https://orcid.org/0000-0002-1508-787X)
- Frank Siegelin
- Christian Hollerith
- Jawad Hadid (ORCID: https://orcid.org/0000-0003-1036-2550)
- C. M. Chisholm
- Matthias Gramich (ORCID: https://orcid.org/0000-0002-1508-787X)
Institutions
- Centre National de la Recherche Scientifique (FR)
- Infineon Technologies (Germany) (DE)
- Munich University of Applied Sciences (DE)
- IMEC (BE)
- Laboratoire d'Étude des Microstructures et de Mécanique des Matériaux (FR)
- Siemens (Austria) (AT)
- Infineon Technologies (Austria) (AT)
- HESAM Université (FR)
- Österreichisches Forschungsinstitut für Chemie und Technik (AT)
- Université de Lorraine (FR)
Publication Details
- Journal
- Proceedings - International Symposium for Testing and Failure Analysis
- Published
- 2025-11-07
- DOI
- https://doi.org/10.31399/asm.cp.istfa2025p0417
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- European Commission