Interaction of components in the GdNiIn1-xMx (M = Ge, Sn, Sb) systems

Interaction between the components in the GdNiIn 1- x M x ( M = Ge, Sn, Sb) systems were investigated in full concentration range at 870 K. The samples for the investigation were synthesized by arc-melting of pure metals with subsequent annealing at 870 K for a month. Phase analysis was carried out by X-ray powder diffraction (DRON 2.0M, Fe K α-radiation, PANalytical X’Pert Pro, Cu K α-radiation (INTiBS PAN, Wrocław)). The results of X-ray powder diffraction were confirmed by energy dispersive X-ray analysis ( scanning electron microscope RЕММА–102–02 and Tescan Vega 3 LMU). Formations of two substitutional solid solutions were observed in the GdNiIn 1- x Ge x and GdNiIn 1- x Sn x systems, while the solubility of the fourth component in the initial compounds of equiatomic composition is not traceable in the GdNiIn 1- x Sb x system. Solubility ranges for solid solutions were found and changes of unit cell parameters were calculated: GdNiIn 1-0.7 Ge 0-0.3 (ZrNiAl; P -62 m ; а = 0.74526(5)–0.74369(7), с = 0.38364(3)–0.38376(4) nm; GdNiGe 1-0.7 In 0-0.3 (TiNiSi, Pnma ; а = 0.7009–0.022(2), b = 0.4280–0.4249(1), с = 0.7283–0.7309(2) mn); GdNiIn 1 . 0 - 0 . 5 Sn 0 - 0 . 5 (ZrNiAl; P -62 m ; 0.74526(5)–0.74455(7); с = 0.38364(3)–0.38313(4) nm) and GdNiSn 1 . 0-0 . 8 In 0-0 . 2 (TiNiSi; Pnma ; a = 0.72241(7)–0.72253(10); b = 0.44835(5)–0.44870(7); c = 0.76806(9)–0.76916(12) nm). The results of partial substitution of In atoms by Sn atoms were confirmed by single crystal X-ray analysis (SuperNova Rigaku Oxford Diffraction, Mo K α-radiation (TU Dresden)) and EDX data (Zeiss-EVO MA 15 (IFW Dresden)). GdNiIn 0.8 Sn 0.2 phase crystallizes with ZrNiAl-type structure ( P -62 m , hP 9, а = 0.74618(3), с = 0.38291(2) nm, V = 0.18464(1) nm 3 , R 1 = 0.0157, w R 2 = 0.0362, 288 F 2 values, 16 variables. Keywords : indium, solid solution, powder data, single crystal, crystal structure.