Nanoindentation for Tailored Single-Photon Emitters in hBN: Influence of Annealing on Defect Stability

Quantum emitters in multilayer hexagonal boron nitride (hBN) are created by nanoindentation by using atomic force microscopy (AFM). Carbon-coated AFM tips are pushed into hBN flakes, creating localized carbon-based defects with spectrally tailored optical emission. We identify four predominant classes of single-photon emitters (SPEs) and show that our fabrication technique provides a high yield of bright emitters with narrow line widths and common dipole orientation, most of which exhibit a weak electron-phonon interaction because the SPEs are decoupled from the local atomic environment. We demonstrate that high-temperature annealing causes etching of hBN even in an inert environment. This defect engineering offers a controlled pathway for the creation of SPEs in hBN as a prerequisite for scalable quantum photonic applications.

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Publication Details

Journal
ACS Nano
Published
2025-10-09
DOI
https://doi.org/10.1021/acsnano.5c09221
Citations
2
Primary Topic
Diamond and Carbon-based Materials Research
Type
article
Field-Weighted Citation Impact
1.04
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article

Nanoindentation for Tailored Single-Photon Emitters in hBN: Influence of Annealing on Defect Stability

Christoph T. Koch, Soleen Saeed Ahmed, Tolga Wagner, Jeremias Resch et al.
2 citations
ACS Nano
Diamond and Carbon-based Materials Research
1.04
article

Nanoindentation for Tailored Single-Photon Emitters in hBN: Influence of Annealing on Defect Stability

Christoph T. Koch, Soleen Saeed Ahmed, Tolga Wagner, Jeremias Resch, Wolfgang Wernsdorfer, Ines Häusler, Ioannis Karapatzakis, Marcel Schrodin, Luis Kussi, C. Sürgers, Lukas Harsch, Csongor Imre
article en
2 citations

Abstract

Quantum emitters in multilayer hexagonal boron nitride (hBN) are created by nanoindentation by using atomic force microscopy (AFM). Carbon-coated AFM tips are pushed into hBN flakes, creating localized carbon-based defects with spectrally tailored optical emission. We identify four predominant classes of single-photon emitters (SPEs) and show that our fabrication technique provides a high yield of bright emitters with narrow line widths and common dipole orientation, most of which exhibit a weak electron-phonon interaction because the SPEs are decoupled from the local atomic environment. We demonstrate that high-temperature annealing causes etching of hBN even in an inert environment. This defect engineering offers a controlled pathway for the creation of SPEs in hBN as a prerequisite for scalable quantum photonic applications.

ACS NanoVol. 19(41)
Karlsruhe Institute of Technology (DE), Humboldt-Universität zu Berlin (DE)
Openalex Percentile: Top 22%
Diamond and Carbon-based Materials Research
1.04
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