Mitigation of Interface Trap-Induced Bump Effects in p-Type MOS Capacitor

Authors

Benoît Vanderheyden (ORCID: https://orcid.org/0000-0003-1247-3369)
F.A. Eleuterio
Stéphane Raël (ORCID: https://orcid.org/0000-0001-6642-1607)
Ngoc Duy Nguyen (ORCID: https://orcid.org/0000-0002-0142-1611)
Jean Lévêque

Institutions

University of Liège (BE)
Groupe de Recherche en Énergie Électrique de Nancy (FR)
Groupe de Recherche Clinique en Neuro-urologie (FR)

Publication Details

Journal: SPIRE - Sciences Po Institutional REpository
Published: 2025-04-08
Primary Topic: Semiconductor materials and devices
Type: article
Field-Weighted Citation Impact: 0.00

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article

Mitigation of Interface Trap-Induced Bump Effects in p-Type MOS Capacitor

Benoît Vanderheyden, F.A. Eleuterio, Stéphane Raël, Ngoc Duy Nguyen et al.

Apr 8, 2025

SPIRE - Sciences Po Institutional REpository

Semiconductor materials and devices

article

Mitigation of Interface Trap-Induced Bump Effects in p-Type MOS Capacitor

Benoît Vanderheyden, F.A. Eleuterio, Stéphane Raël, Ngoc Duy Nguyen, Jean Lévêque

April 8, 2025article en

Abstract

No abstract available for this paper.

SPIRE - Sciences Po Institutional REpository

University of Liège (BE), Groupe de Recherche en Énergie Électrique de Nancy (FR), Groupe de Recherche Clinique en Neuro-urologie (FR)

Openalex Percentile: Top 72%

Semiconductor materials and devices

OpenAlex

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Mitigation of Interface Trap-Induced Bump Effects in p-Type MOS Capacitor — Benoît Vanderheyden, F.A. Eleuterio, et al. · SPIRE - Sciences Po Institutional REpository (2025) | TGRS Research Map | TGRS