Analysis of Temperature-Dependent Surface Properties in the Ni/SiO2/Si System During Electron Beam Deposition

In this study, we investigated the morphological properties of nickel (Ni) island-shaped thin films formed on a SiOx/Si substrate using the electron beam evaporation method. The morphology was examined using Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). SEM images were analyzed with the help of ImageJ software to determine the size, density, distribution, and coverage ratio of the islands. The results showed a strong dependence of island morphology on substrate temperature: at 20 °C, the islands had an irregular shape with a density of 103 µm⁻², while at 250 °C and 500 °C, the islands became more spherical in shape, and their densities increased to 751.8 and 1212.4 µm⁻², respectively. AFM analysis confirmed the uniform distribution of the islands and their average height (15.4 nm). EDS analysis revealed the presence and uniform distribution of Si, O, and Ni elements on the surface. These findings confirm that substrate temperature is a critical factor in the island formation process.