Statical Currents of p-Si–n-Si1-δSnδ–n+-Si1-δSnδ (0≤δ≤0.04)-Structures with Tin Quantum Dots

In this work, the current-voltage characteristics of p-Si-n-Si1-δSnδ structures at room temperature were investigated in order to clarify the role of injection effects in the formation of electrical properties of heterostructures obtained on the basis of the Si1-δSnδ (0 ≤ δ ≤ 0.04) solid solution. It is shown that the sub linear sections observed on the current-voltage characteristics are well described within the framework of the theory of the injection depletion effect. The value of the parameter “a” was determined directly from the sub linear section of the current-voltage characteristic, which in the following allowed determining the concentration of deep impurities responsible for the appearance of the sub linear section. With this it was proved that the investigated structure can be considered as p-Si-n-Si1-δSnδ–n+-Si1-δSnδ (0 ≤ δ ≤ 0.04) - a junction with a high-resistance n-Si1-δSnδ layer. An analysis of the results obtained allowed us to conclude that in this Si1-δSnδ (0 ≤ δ ≤ 0.04) solid solution, scattering of charge carriers not only on complex complexes, but also on nanoformations plays a significant role in the formation of electro physical properties. Based on the results of the studies, it was concluded that the use of epitaxial films of Si1-δSnδ (0 ≤ δ ≤ 0.04) solid solutions, obtained on silicon substrates, as promising materials, when developing diodes based on them, operating in the double injection mode.