Integrated Charge Pump in 180 nm SOI Technology for a Silicon Drift Detector

This paper presents a novel biasing method for a silicon drift detector (SDD). The presented integrated circuit in 180nm silicon-on-insulator (SOI) technology generate negative high-voltages for stable operation of a SDD. The integrated circuit uses a Pelliconi charge pump operating at a frequency of 10MHz, so that voltages of up to −70V are generated with a SDD-typical load current of 25μA. The simulations have been done with open source tools. To satisfy the rigid noise requirements of SDD-based systems thorough frequency-planning has been performed for the analog and digital signal chain. Operating an SDD module with a high-voltage supply based on a charge pump has been shown to be possible with high resolution.