Gain Expansion Generator Based on a Reduced Conduction Angle for H-Band Applications
This paper reports the characterization of a sub-millimeter-wave gain expansion generator fabricated in a 35-nm indium gallium arsenide metamorphic high-electron-mobility transistor technology. The circuit exhibits a gain expansion of 2 to 3.9 dB in the 280 − 325 GHz frequency range by operating a single-stage amplifier with a reduced conduction angle. Simulated and measured S-parameters are compared under class-A, class-B, and class-C bias conditions. The frequency response of the gain expansion is analyzed for class-B and various class-C bias conditions.
Authors
- Benjamin Schoch (ORCID: https://orcid.org/0000-0003-1380-4174)
- Dominik Wrana (ORCID: https://orcid.org/0000-0002-8282-9060)
- Lukas Gebert (ORCID: https://orcid.org/0009-0009-4658-5941)
- A. Tessmann (ORCID: https://orcid.org/0000-0002-0046-4417)
- Ingmar Kallfass (ORCID: https://orcid.org/0000-0001-6006-3124)
- Thomas Ufschlag (ORCID: https://orcid.org/0009-0003-5808-3865)
Institutions
- University of Stuttgart (DE)
- Stuttgart Technical University of Applied Sciences (DE)
- Fraunhofer Institute for Applied Solid State Physics (DE)
Publication Details
- Published
- 2025-09-24
- DOI
- https://doi.org/10.1109/austrochip67945.2025.11183676
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00