Thin film LiNbO<sub>3</sub> surface preparation using SC-1

This study investigates the use of Standard Cleaning 1 (SC-1), a routine treatment in silicon micro-/nano-fabrication, as a step in the processing of photonic structures and waveguides on thin films of lithium niobate on insulator (LNOI). We investigate the use of SC-1 for surface preparation and as a cleaning method to remove residual byproducts after ICP etching, evaluating its impact on etching dynamics and the quality of the LiNbO 3 thin film. Our results demonstrate that SC-1 cleaning removes a surface layer of LiNbO 3 characterized by higher oxygen vacancies. These oxygen vacancies accelerate the etching process and lead to faster under-etching of Si 3 N 4 capping layers on LiNbO 3 , causing pattern delamination, particularly at sub-micron scales where under-etching is more detrimental. Finally, we show that carrying out a SC-1 treatment preliminary to Si 3 N 4 capping layer deposition enables the fabrication of Si 3 N 4 gratings with sub-100 nm width on LiNbO 3 thin films.

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Publication Details

Journal
Optical Materials Express
Published
2025-10-08
DOI
https://doi.org/10.1364/ome.572573
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
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article

Thin film LiNbO3 surface preparation using SC-1

Kumar Kinjalk, Olivier Gauthier‐Lafaye, Benjamin Reig, Antoine Monmayrant et al.
Optical Materials Express
Semiconductor Lasers and Optical Devices
article

Thin film LiNbO3 surface preparation using SC-1

Kumar Kinjalk, Olivier Gauthier‐Lafaye, Benjamin Reig, Antoine Monmayrant, S. Calvez, Jérôme Esvan, Clément Selva
article en

Abstract

This study investigates the use of Standard Cleaning 1 (SC-1), a routine treatment in silicon micro-/nano-fabrication, as a step in the processing of photonic structures and waveguides on thin films of lithium niobate on insulator (LNOI). We investigate the use of SC-1 for surface preparation and as a cleaning method to remove residual byproducts after ICP etching, evaluating its impact on etching dynamics and the quality of the LiNbO 3 thin film. Our results demonstrate that SC-1 cleaning removes a surface layer of LiNbO 3 characterized by higher oxygen vacancies. These oxygen vacancies accelerate the etching process and lead to faster under-etching of Si 3 N 4 capping layers on LiNbO 3 , causing pattern delamination, particularly at sub-micron scales where under-etching is more detrimental. Finally, we show that carrying out a SC-1 treatment preliminary to Si 3 N 4 capping layer deposition enables the fabrication of Si 3 N 4 gratings with sub-100 nm width on LiNbO 3 thin films.

Optical Materials ExpressVol. 15(11)
Centre National de la Recherche Scientifique (FR), Université Toulouse III - Paul Sabatier (FR), Université Fédérale de Toulouse Midi-Pyrénées (FR), Laboratoire d'Analyse et d'Architecture des Systèmes (FR), Teem Photonics (France) (FR), Laboratoire des Technologies de la Microélectronique (FR), Centre Interuniversitaire de Recherche et d’Ingénierie des Matériaux (FR)
Openalex Percentile: Top 72%
Semiconductor Lasers and Optical Devices
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