Experimental Characterization of a Silicon Nitride Asymmetric Loop-Terminated Mach-Zehnder Interferometer with a Refractive Index-Engineered Sensing Arm

We report the design, fabrication, and experimental characterization of an asymmetric loop-terminated Mach-Zehnder interferometer (a-LT-MZI) realized on a silicon nitride (SiN) platform for refractive index (RI) sensing. The LT-MZI architecture incorporates a Sagnac loop that enables bidirectional light propagation, effectively doubling the interaction length without enlarging the device footprint, enhancing sensitivity and improving stability against environmental noise. Subwavelength grating (SWG) waveguides were integrated into the sensing arm to further strengthen light-matter interaction. The fabricated devices exhibited stable and well-defined interference fringes, with uniform wavelength shifts that scaled linearly with changes in the surrounding refractive index. Standard a-LT-MZI structures (ΔL = 300 μm) achieved experimental sensitivities of 288.75-301.25 nm/RIU, while SWG-enhanced devices reached 496-518 nm/RIU, confirming the effectiveness of refractive index engineering. Comparative analysis against previously reported MZI-based sensors highlights the competitive performance of the proposed design. By combining the scalability and CMOS compatibility of silicon nitride with the sensitivity and robustness of the a-LT-MZI architecture, this device provides a compact and versatile platform for next-generation lab-on-chip photonic sensors. It holds strong potential for applications in biochemical diagnostics, medical testing, and environmental monitoring.