Advances in oxide semiconductors for flexible and stretchable thin film transistors

Abstract The rapid evolution of next-generation electronics necessitates the seamless integration of metal oxide semiconductors (MOS) with full flexibility and stretchability. MOS materials exhibit exceptional electronic mobility, environmental stability, and scalable processability, making them indispensable for future flexible and stretchable electronic applications. Innovations in MOS-based thin-film transistor (TFT) fabrication have enabled sustainable, low-temperature processing, offering cost-efficient pathways for advanced electronic architectures. For practical implementations, flexible and stretchable substrates such as polyethylene terephthalate, polycarbonate, polyethylene naphthalate, polyurethane acrylate, polyethersulfone, polyimide (PI), composite PI , poly(amide–imide), SU8, thermoplastic polyurethane (TPU), and polydimethylsiloxane are pivotal. A broad spectrum of semiconductors including MOS, two-dimensional materials, carbon nanostructures, and hybrid organic–inorganic systems enables high-performance device engineering. Among MOS, zinc oxide (ZnO), indium oxide (In 2 O 3 ), tin oxide (SnO 2 ), doped ZnO, indium gallium ZnO , zinc tin oxide (ZTO), and indium ZTO dominate flexible TFT technology due to their superior charge transport, uniformity, and large-area process compatibility. This review delves into recent MOS advancements, underscoring their transformative role in flexible electronics, including wearable technology, foldable displays, and smart systems. By addressing modern electronics’ scalability, cost, and durability challenges, MOS establishes itself as a cornerstone for the future of high-performance, stretchable, and sustainable electronic innovations.