High Chern number quantum anomalous Hall states in Haldane-graphene multilayers

We consider a rhombohedral-stacked $N$-layer graphene coupled to a monolayer of Haldane model. We show that high order Dirac points in multilayer graphene can be gapped out by topological proximity effect of the Haldane model layer, leading to total Chern number $|C|=N+1$ quantum anomalous Hall states. This provides a new way to construct high Chern number quantum anomalous Hall states in realistic crystalline graphene systems.

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Publication Details

Journal
Physical review. B./Physical review. B
Published
2025-12-10
DOI
https://doi.org/10.1103/vyf8-9cw9
Primary Topic
Graphene research and applications
Type
article
Field-Weighted Citation Impact
0.00
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article

High Chern number quantum anomalous Hall states in Haldane-graphene multilayers

Long Zhang, Fu‐Chun Zhang, Yuejiu Zhao
Physical review. B./Physical review. B
Graphene research and applications
article

High Chern number quantum anomalous Hall states in Haldane-graphene multilayers

Long Zhang, Fu‐Chun Zhang, Yuejiu Zhao
article en

Abstract

We consider a rhombohedral-stacked $N$-layer graphene coupled to a monolayer of Haldane model. We show that high order Dirac points in multilayer graphene can be gapped out by topological proximity effect of the Haldane model layer, leading to total Chern number $|C|=N+1$ quantum anomalous Hall states. This provides a new way to construct high Chern number quantum anomalous Hall states in realistic crystalline graphene systems.

Physical review. B./Physical review. BVol. 112(23)
Kavli Institute for Theoretical Sciences (CN), University of Chinese Academy of Sciences (CN)
Openalex Percentile: Top 78%
Graphene research and applications
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