Close Space Sublimation Growth of Sb <sub>2</sub> (S,Se) <sub>3</sub> Thin-Film Solar Cells

This study reports the synthesis and characterization of Sb<sub>2</sub>(S,Se)<sub>3</sub> thin films for thin-film photovoltaics via a single-source close space sublimation (CSS) approach. We demonstrate power conversion efficiencies of up to 4.3% with notable improvements in open-circuit voltage (<i>V</i><sub>oc</sub> >490 mV) compared to those of Sb<sub>2</sub>Se<sub>3</sub> equivalents. Secondary ion mass spectrometry, X-ray diffraction, and cross-sectional scanning and transmission electron microscopies identified some issues in controlling film stoichiometry, particularly with sulfur loss, leading to oxide formation and elevated series resistance, reducing the fill factor in completed devices. We also identify clear discrepancies between the determined bandgap, sulfur content inferred from X-ray diffraction analysis, and sulfur content of the synthesized source material. We conclude that while CSS is a promising method for Sb<sub>2</sub>(S,Se)<sub>3</sub> film fabrication, addressing sulfur loss during deposition is crucial to achieving further improvements in device efficiency.

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Publication Details

Journal
ACS Applied Materials & Interfaces
Published
2025-10-08
DOI
https://doi.org/10.1021/acsami.5c10627
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

Close Space Sublimation Growth of Sb 2 (S,Se) 3 Thin-Film Solar Cells

Thomas P. Shalvey, Leon Bowen, Jonathan Douglas Major, T. D. Veal et al.
ACS Applied Materials & Interfaces
Chalcogenide Semiconductor Thin Films
article

Close Space Sublimation Growth of Sb 2 (S,Se) 3 Thin-Film Solar Cells

Thomas P. Shalvey, Leon Bowen, Jonathan Douglas Major, T. D. Veal, Matthew J. Smiles, Daniya A. Sindi
article en

Abstract

This study reports the synthesis and characterization of Sb<sub>2</sub>(S,Se)<sub>3</sub> thin films for thin-film photovoltaics via a single-source close space sublimation (CSS) approach. We demonstrate power conversion efficiencies of up to 4.3% with notable improvements in open-circuit voltage (<i>V</i><sub>oc</sub> >490 mV) compared to those of Sb<sub>2</sub>Se<sub>3</sub> equivalents. Secondary ion mass spectrometry, X-ray diffraction, and cross-sectional scanning and transmission electron microscopies identified some issues in controlling film stoichiometry, particularly with sulfur loss, leading to oxide formation and elevated series resistance, reducing the fill factor in completed devices. We also identify clear discrepancies between the determined bandgap, sulfur content inferred from X-ray diffraction analysis, and sulfur content of the synthesized source material. We conclude that while CSS is a promising method for Sb<sub>2</sub>(S,Se)<sub>3</sub> film fabrication, addressing sulfur loss during deposition is crucial to achieving further improvements in device efficiency.

ACS Applied Materials & InterfacesVol. 17(42)
University of Liverpool (GB), Durham University (GB), Umm al-Qura University (SA), Stephens College (US), Russell Sage College (US)
Openalex Percentile: Top 72%
Chalcogenide Semiconductor Thin Films
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