Formation Mechanism of Eutectic Microstructure for CaHfO<sub>3</sub>/HfO<sub>2</sub>

The mechanism of fine eutectic structure formation for CaHfO3/HfO2 was investigated. CaHfO3/HfO2 eutectic solidification film was prepared using a high-power laser with 1400W. The film preparation was conducted in a furnace at 1300oC. The scanning speed of laser was set to 500 to 2000 mm/s. The scanning speed of the laser was greatly varied to create a solidified film and the intermediate steps of micro-structure formation were observed. The micro-structure morphology immediately after solidification was a structure in which an intermediate phase was surrounded by an HfO2 phase. CaHfO3 phase deposited in dot-like form from the intermediate phase. It was confirmed that the dot-like deposit phase connected through atomic diffusion at high temperatures, ultimately forming a fine lamellar structure. It was confirmed that the fine eutectic microstructure of CaHfO₃/HfO₂ is not formed by competitive growth at the melting point during conventional eutectic solidification, but rather is ultimately formed through repeated phase separation after the solidification.

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Publication Details

Journal
Journal of Material Science and Technology Research
Published
2025-10-07
DOI
https://doi.org/10.31875/2410-4701.2025.12.06
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.00

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article

Formation Mechanism of Eutectic Microstructure for CaHfO3/HfO2

Tohru Sekino, Haruka Ohta, K. Izawa, Shunkichi Ueno
Journal of Material Science and Technology Research
Semiconductor materials and devices
article

Formation Mechanism of Eutectic Microstructure for CaHfO3/HfO2

Tohru Sekino, Haruka Ohta, K. Izawa, Shunkichi Ueno
article en

Abstract

The mechanism of fine eutectic structure formation for CaHfO3/HfO2 was investigated. CaHfO3/HfO2 eutectic solidification film was prepared using a high-power laser with 1400W. The film preparation was conducted in a furnace at 1300oC. The scanning speed of laser was set to 500 to 2000 mm/s. The scanning speed of the laser was greatly varied to create a solidified film and the intermediate steps of micro-structure formation were observed. The micro-structure morphology immediately after solidification was a structure in which an intermediate phase was surrounded by an HfO2 phase. CaHfO3 phase deposited in dot-like form from the intermediate phase. It was confirmed that the dot-like deposit phase connected through atomic diffusion at high temperatures, ultimately forming a fine lamellar structure. It was confirmed that the fine eutectic microstructure of CaHfO₃/HfO₂ is not formed by competitive growth at the melting point during conventional eutectic solidification, but rather is ultimately formed through repeated phase separation after the solidification.

Journal of Material Science and Technology ResearchVol. 12
Nihon University (JP), The University of Osaka (JP)
Iwatani Naoji Foundation
Openalex Percentile: Top 72%
Semiconductor materials and devices
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