The effect of electromagnetic radiation on the performance of semiconductor devices

Strong electromagnetic fields significantly affect the performance of control and communication systems, in particular given the inhomogeneity of protective screens, when the fields penetrate inside radio-electronic devices. Such processes are studied due to the increasingly widespread use of semiconductor elements, which have a high sensitivity to the effects of electromagnetic radiation. It is extremely relevant to confirm the possibility of operation of switching devices under the influence of high levels of electromagnetic fields. The Reference Measurement Standard of Ukraine for pulsed electric and magnetic fields (hereinafter referred to as the REMF-standard), developed at the Scientific-&-Research Planning-&-Design Institute “Molniya” of NTU “KhPI” of NTU “KhPI”, allows not only to reproduce possible operating electromagnetic fields affecting the equipment, but also to provide practical recommendations for the most reliable operation modes of switching equipment based on semiconductor elements. A physical model of reverse failure mechanisms of semiconductor diodes was developed and tested. A comparative analysis of the results of the experiments and of the calculated data allows using the proposed model to determine the quantitative characteristics of reverse failures and the criteria for their occurrence. The effect of pulsed electromagnetic radiation on the current-voltage characteristics of direct current sections of diodes was experimentally studied. The results showed the presence of sections that characterize the presence of the mode of generation of natural oscillations of these devices under the influence of the electromagnetic field. The obtained theoretical results of the study allow for practical recommendations as for selecting the most reliable operation modes of switching equipment based on semiconductor elements under the influence of high-level electromagnetic fields.