Investigation on Electrical Properties and Safe-Operating Area for Novel Split-gate IGBTs

In this work, the electrical properties and safe-operating area (SOA) of two novel split-gate insulated gate bipolar transistors (IGBTs): the interlaced gate IGBT(IGT IGBT) and the segmented gate IGBT(SGT IGBT) are systematically investigated. Through TCAD Sentaurus simulations, the impact of the poly gate-to-emitter area ratio (W<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</inf>/W<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">E</inf>) on device performance is analyzed. Both structures feature a built-in p-MOSFET to enhance conductivity modulation and reduce turn-off loss(E<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</inf>). The simulation results demonstrate distinct performance advantages between the two designs: the IGT IGBT achieves superior forward conduction characteristics and enhanced electromagnetic interference (EMI) suppression compared to the SGT IGBT, while the latter exhibits lower switching losses and reduced input capacitance. Increasing the W<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</inf>/W<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">E</inf> ratio amplifies channel density, thereby improving forward conduction capability. However, this enhancement inversely degrades switching efficiency and compromises short-circuit withstand robustness.