Dynamic Model of Non-Segmented SiC MOSFETs Considering Switching Behavior and Temperature Effects

In this work, a behavioral model of SiC MOSFETs is presented, with a focus on dynamic switching behavior. The model is constructed in Matlab/Simulink, and non-segmented equations are employed to describe the static output characteristics. Additionally, the body diode and parasitic capacitance are modeled separately. The validation results demonstrate the high accuracy in output characteristics, transfer characteristics, and body diode characteristics. The model can also accurately predict dynamic parameters, including switching loss, current transition characteristics, and switching waveforms in dynamic characteristics.