A Dual-Voltage 650 V and 100 V GaN Integrated Platform Featuring High-Performance Monolithic Components

This paper presents two integrated platforms developed by PH laboratory: a 650 V platform and a 100 V platform. Both platforms feature high-performance e-mode GaN HEMTs and a variety of passive components, including 2DEG resistors, metal resistors, p-GaN stack capacitors, M/2DEG capacitors, and MIM capacitors. The 650 V e-mode GaN HEMT demonstrates a V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> of 1.3 V, an R<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> of 10.8 Ω•mm, and a BV of 843 V, while the 100 V e-mode GaN HEMT exhibits a V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> of 1 V, an R<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> of 3.1 Ω•mm, and a BV of 174 V. Passive components are characterized: 2DEG resistors show a contact resistance of 0.38 Ω•mm (650 V) and 0.3 Ω•mm (100 V), with sheet resistances of 347.5 Ω/sq (650 V) and 403 Ω/sq (100 V). Metal resistors achieve a low sheet resistance of 17 Ω/sq, ideal for precision applications. The p-GaN stack capacitors reach maximum densities of 162 nF/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> (650 V) and 115 nF/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> (100 V), while MIM capacitors achieve 20 nF/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> (650 V) and 589.7 nF/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> (100 V), enabling significant area savings. These platforms offer superior performance and design flexibility, making it highly suitable for compact, high-power-density applications.