A Novel Analytical Physical Model of Gate-drain Capacitance and Output Characteristics for SiC-MOSFET

In this paper, a new physical model for gate-drain capacitance and output characteristics of SiC-MOSFET is developed. The proposed model takes the secondary effects of gate-drain capacitance and output characteristics into account. Methods for adjusting parameters with deviations in the simulation main loop and datasheet are also proposed. By the comparison of experiment and simulation under 600V/160A, 400V/108A, and 200V/54A, the maximum relative errors of the switching transient are about 6%. The proposed model has sufficient accuracy in predicting the dynamic behavior of SiC MOSFETs.