Analysis and Prediction Method of Gate Voltage Peak in Switching Transient of GaN E-HEMT

GaN HEMTs are being widely used due to their fast switching characteristics, which also cause undesirable switching oscillations and lead to voltage and current peaks related to their overshoots in fast switching operation. Gate voltage peak is a particularly severe issue in GaN devices for their narrow safe drive voltage range. This paper analyzes the synthesis of gate voltage and power oscillation as a part of interference source. Then the influence of various parameters and operating conditions are considered and a method for quantitative prediction of gate voltage peak is proposed.