A Novel Zero-Pressure Packaging Structure of High-Voltage SiC IGBT Device

The press-pack device can fully leverage the advantages of silicon carbide (SiC) devices in high voltage, heat dissipation, and low inductance; however, the existing press-pack scheme cannot meet the requirements of high-voltage SiC devices due to the small area of SiC chips. Therefore, considering the pressure balancing design of SiC chips and the requirements of high field strength, low sensing, and heat dissipation, a zero-pressure packaging scheme for high-voltage SiC devices is designed in this paper. An 18 kV SiC insulate gate bipolar transistor (IGBT) press pack module is developed based on SiC IGBT chips independently. The static and switching characteristics of the module are tested, and the test results show that the module exhibits low leakage current and high blocking characteristics. At the same time, the SiC IGBT module verifies the feasibility of the zero-pressure packaging structure.