Development of A Novel Analytical Trapped Charge Model for Total Ionizing Dose Effects of SiC MOSFETs
A novel analytical model for the total ionizing dose effect of SiC MOSFETs is proposed. The accuracy of the model has been verified by TCAD tool. The effects of the electric field across the gate oxide and temperature during the annealing process are discussed. The simulated results of these effects from the model are consistent with previous experimental results.
Authors
- Hu Q (ORCID: https://orcid.org/0000-0002-1718-4542)
- Xin Yang (ORCID: https://orcid.org/0000-0001-6922-2419)
- Qingzhong Gui (ORCID: https://orcid.org/0000-0003-4997-4271)
Institutions
- Hunan University (CN)
Publication Details
- Published
- 2025-08-15
- DOI
- https://doi.org/10.1109/wipda-asia63772.2025.11183991
- Primary Topic
- Radiation Effects in Electronics
- Type
- article
- Field-Weighted Citation Impact
- 0.00