Investigation of L-FER ESD Protection Capability on E-mode p-GaN HEMT

In this work, several lateral field effect rectifiers (L-FERs) were investigated as electrostatic discharge (ESD) protection circuit for p-GaN AlGaN/GaN HEMTs. Four different ESD protection circuits were fabricated simultaneously for comparison, based on a Complementary Metal Oxide Semiconductor (CMOS)-compatible 6-inch GaN-on-Si platform. Human Body Model (HBM) ESD single-pulse stress testing was performed, following the JS-001-2023 testing standard. Notably, the device pass a 30th stress cycle test, demonstrating the robustness of HBM ESD capability within specification.