Novel Structure for High-Voltage Vertical β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes: A TCAD Study
The impact of different device structures and parameters on the reverse-bias characteristics of vertical β-Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> Schottky barrier diodes (SBDs) is investigated using calibrated TCAD simulations. The excellent agreement between numerical and experimental results validates the accuracy of our model. The reverse-bias characteristics of β-Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> SBDs with four different termination structures, namely, no termination (SBD 1), mesa termination (SBD 2), stepped-structure mesa termination (SBD 3), and stepped-structure mesa termination with oxide dielectric (SBD 4), are studied. The results show that the stepped-structure mesa termination with proper step structure design could effectively increase the reverse breakdown voltage of β-Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> SBD. Moreover, β-Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> SBD 4 with an optimized structure achieves a breakdown voltage of approximately 1380 V. Compared to the reverse breakdown voltages of SBD 1, SBD 2, and SBD 3, the value of SBD 4 shows an increase of 180%, 48.4%, and 10.9%, respectively. This work will provide theoretical guidance for the preparation of high-voltage β-Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> SBDs.
Authors
- Teng Jiao (ORCID: https://orcid.org/0000-0003-2515-0382)
- Mingwen Fan
- Dao Hua Zhang (ORCID: https://orcid.org/0000-0002-5853-254X)
- Xian‐Hu Zha
- Jiaxiang Chen (ORCID: https://orcid.org/0000-0001-6793-4025)
- Xuemei Ding (ORCID: https://orcid.org/0000-0003-4298-4493)
- Yan Liu (ORCID: https://orcid.org/0000-0001-5583-0587)
- Xiaoping Wang (ORCID: https://orcid.org/0000-0002-7862-0491)
- M.J. Yang
- Yu‐Xi Wan
Publication Details
- Published
- 2025-08-15
- DOI
- https://doi.org/10.1109/wipda-asia63772.2025.11184010
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00