A Synchronously Implanted Termination for 1200V SiC Trench-Gate MOSFET

This work addresses the feasibility challenges of conventional float limiting ring (FLR) termination structures in Silicon Carbide (SiC) trench-gate MOSFETs. Through high-energy aluminum ion implantation, the narrow spacing between float rings is difficult to achieve. To avoid critical dimension (CD) constraints, we propose a novel termination structure fabricated synchronously with standard low-energy P-well and P+ implantation steps. The proposed methodology eliminates additional implantation processes while maintaining compatibility with conventional SiC manufacturing flows. Compared to traditional FLR approaches, the new structure demonstrates enhanced process tolerance, providing a practical solution for scalable production of next generation SiC power devices.