Advanced Packaging for High-Voltage SiC Module with Excellent Thermal, Mechanical, and Electrical Properties

To address the critical challenges of thermal management, thermo-mechanical stress concentration, and electric field distortion in high-voltage SiC power modules, this study proposes a double-sided packaging architecture incorporating sintered-silver interconnects and through-ceramic-vias (TCV). Leveraging multi-physics simulations using Ansys Workbench and COMSOL Multiphysics software, the proposed design demonstrates superior performance across thermal, mechanical, and electrical domains. Compared to conventional single-sided modules, the TCV-enhanced architecture achieves a 34°C reduction in junction temperature from 198.12°C to 164.09°C at a power dissipation of 100 W, 50%, 66.6%, and 71.2% lower von-Mises stress in terms of overall package, SiC die, and sintered-silver interconnects, respectively. Furthermore, electric field simulations reveal a 20.6% reduction from 70.3 kV/mm to 55.8 kV/mm in peak field intensity at triple points when applying a DC voltage of 10 kV , attributed to optimized geometric symmetry, TCV-based current redistribution, and thermal-electrical coupling effects. These advancements validate the architecture’s capability to simultaneously enhance power density, reliability, and insulation performance for 10 kV-class SiC modules, paving the way for next-generation high-voltage power electronics.