High-Temperature Device Model for GaN-based MIS-HEMTs

This study develops a high-temperature model for GaN-based MIS-HEMTs, enabling accurate simulation from 25 °C to 200 °C. Using the Advanced Curtice Quadratic Model, key parameters like threshold voltage and transconductance were fitted to experimental data and adjusted with temperature. Simulated I-V characteristics closely matched measurements, showing clear thermal trends. Dynamic DCFL inverter simulations confirmed the model’s reliability, with rise time increasing at higher temperatures. The model accounts for parasitic effects and supports both static and dynamic analysis, making it suitable for high-temperature applications in automotive, aerospace, and renewable energy.