Analysis of SiC Output Capacitance Effects on Soft-Switching Characteristics in Three-Level Resonant Converters

To address the high power density and high efficiency requirements of isolated DC/DC converters in novel power load systems, this paper investigates the soft-switching characteristics of a silicon carbide SiC-based three-level resonant converter. Through modal analysis, the influence mechanism of power device output capacitance parameters on soft-switching behavior is revealed. By comparing the impact of the presence and absence of secondary-side switch output capacitance on the soft-switching of primary-side switches, it is found that the magnetizing current required for soft-switching increases when considering the output capacitance, leading to higher conduction losses. The correctness of the magnetizing current calculation is validated through simulations. Experimental verification is conducted on a 2300V DC input / 900V DC output / 25kW prototype, demonstrating the effectiveness of the proposed design.

Authors

Institutions

Publication Details

Published
2025-08-15
DOI
https://doi.org/10.1109/wipda-asia63772.2025.11183926
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Analysis of SiC Output Capacitance Effects on Soft-Switching Characteristics in Three-Level Resonant Converters

Zhiyuan Wang, Binbin Li, Zhe Shao
Silicon Carbide Semiconductor Technologies
article

Analysis of SiC Output Capacitance Effects on Soft-Switching Characteristics in Three-Level Resonant Converters

Zhiyuan Wang, Binbin Li, Zhe Shao
article en

Abstract

To address the high power density and high efficiency requirements of isolated DC/DC converters in novel power load systems, this paper investigates the soft-switching characteristics of a silicon carbide SiC-based three-level resonant converter. Through modal analysis, the influence mechanism of power device output capacitance parameters on soft-switching behavior is revealed. By comparing the impact of the presence and absence of secondary-side switch output capacitance on the soft-switching of primary-side switches, it is found that the magnetizing current required for soft-switching increases when considering the output capacitance, leading to higher conduction losses. The correctness of the magnetizing current calculation is validated through simulations. Experimental verification is conducted on a 2300V DC input / 900V DC output / 25kW prototype, demonstrating the effectiveness of the proposed design.

Harbin Institute of Technology (CN)
Openalex Percentile: Top 72%
Silicon Carbide Semiconductor Technologies
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

Analysis of SiC Output Capacitance Effects on Soft-Switching Characteristics in Three-Level Resonant Converters — Zhiyuan Wang, Binbin Li, et al. · (2025) | TGRS Research Map | TGRS