Novel Tri-gate Multichannel Device for Improved V_th Controllability

Gallium nitride (GaN) high electron mobility transistors (HEMTs) are considered promising candidates for next-generation power electronic applications due to their high electron mobility and wide bandgap. To address the performance limitations of conventional HEMT designs, multichannel HEMTs have been developed. To enhance control over multiple channels, tri-gate architectures have been introduced。 Despite their advantages, achieving enhancement-mode (E-mode) operation in tri-gate multichannel HEMTs remains difficult due to the fabrication challenges associated with extremely narrow fins and the negative effects on electron concentration. This study presents a comparative analysis between a conventional tri-gate MC-HEMT and a novel design, referred to as the MOP-trigate structure. The proposed design incorporates a thin p-type GaN layer surrounding the fins, separated from the gate metal by an oxide layer, to enhance depletion of the 2DEG without reducing fin width. As an extension of the analysis, the multichannel region—serving as the primary structural component—is also examined in detail. This work innovatively designs and uses a TCAD model to analyze and develop novel multichannel devices. It provides a theoretical foundation for future fabrication and experimental efforts and contributes to the advancement of multichannel power device design.