A Multi-Operation Characterization System for Quantifying Dynamic R_ON Degradation in p-GaN gate GaN HEMTs under Real-World Switching Conditions

The dynamic on-resistance (dR<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf>) degradation of commercial p-GaN gate HEMTs poses a significant challenge to their broader adoption in the power electronics market, highlighting the critical need for accurate and effective evaluation methods. In this work, a precise evaluation system for measuring dR<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> of the device is established, enabling a comprehensive assessment of commercial HEMTs under various operating conditions. The device exhibits intensified dR<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> degradation with increasing bus voltage, reaching 1.2× dR<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> at the V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BUS</inf> of 500 V in double-pulse test (DPT). During DC stress test, the device gradually degrades to 1.3× dR<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> as stress time increases. Finally, in the dynamic high-temperature operating life (DHTOL) test, the device achieves the 1.6× dR<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> under continuous high-temperature, high-voltage, and hard-switching coupling stress. These results provide critical insights into the degradation of p-GaN gate HEMTs and validate the robustness of the proposed evaluation system.