Enhancement-Mode Vertical (001) β-Ga<sub>2</sub>O<sub>3</sub> Power Transistor Enabled by Dual Ion Implantation
This study presents a high-performance enhancement-mode (E-mode) β-Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> vertical field-effect transistor (DI-FET) featuring a planar gate structure, fabricated through sequential nitrogen and silicon ion implantation. The device demonstrates a maximum output current density of 123.5 A/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at a drain-source voltage (V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</inf>) of 10 V, a peak transconductance of 49 S/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, a specific on-resistance (Rₒₙ<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">,sp</inf>) of 54.6 mΩ•cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, and a high threshold voltage (V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf>) of 5.7 V. Furthermore, a breakdown voltage (BV) of 812 V is achieved at a gate-source voltage (V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</inf>) of 0 V. These results underscore the considerable potential of nitrogen/silicon dual-ion-implanted β-Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> DI-FETs for next-generation high-performance power electronics.
Authors
- Huanyu Zhang (ORCID: https://orcid.org/0000-0002-2974-9328)
- Tiwei Chen (ORCID: https://orcid.org/0000-0002-2297-2383)
- Gaofu Guo (ORCID: https://orcid.org/0009-0006-2045-8766)
- Aiyun Luo (ORCID: https://orcid.org/0000-0001-9880-8259)
- Zhongming Zeng (ORCID: https://orcid.org/0000-0001-7240-2058)
- Xiaodong Zhang (ORCID: https://orcid.org/0000-0002-8288-035X)
- Li Zhang (ORCID: https://orcid.org/0000-0002-7612-7580)
- Chunhong Zeng (ORCID: https://orcid.org/0000-0002-4640-9608)
- Zibo Li (ORCID: https://orcid.org/0000-0001-8065-7923)
- Dengrui Zhao (ORCID: https://orcid.org/0009-0002-1285-6896)
- Zhili Zou (ORCID: https://orcid.org/0009-0008-7036-2417)
Institutions
- University of Science and Technology of China (CN)
- Suzhou Institute of Nano-tech and Nano-bionics (CN)
Publication Details
- Published
- 2025-08-15
- DOI
- https://doi.org/10.1109/wipda-asia63772.2025.11184029
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00